Wednesday, 7 December 2011

Worlds first 20 nano meter 128 Gb NAND flash announced by Intel and Micron


Within couple of years, we will be able to store one Terabyte of data in a single finger tip size memory storage device. If you think this is a joke, then you should read this post to know the truth.

On 6 Dec 2011, Intel Corporation and Micron Technology Inc announced a new benchmark in NAND flash technology, the worlds first 20 nano meter(nm),128 giabit(Gb),multilevel-cell(MLC) device.

Currently, we have 20nm 64Gb NAND flash devices available in market. With this announcements,the new 20nm 128GB MLC NAND flash device doubles the storage capacity and performance of the companies.


IMFT-20nm_die-context.jpg



Intel and Micron continue to lead the industry with the most advanced NAND production process technology, announcing mass production of their 20nm 64Gb NAND flash.

The industry's first monolithic 128Gb part can store 1 terabyte of data in a single fingertip-size package with just eight die-a new storage benchmark that meets the ongoing demand for slim, sleek products.IMFT-20nm_die.jpgThe companies' 20nm NAND is the first to use an innovative planar cell structure that overcomes the scaling constraints of standard floating gate NAND.

Source : newsroom.intel

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